IRFR9120TRL

IRFR9120TRL, HEXFET power MOSFET, 6.6 A, 40 W, 100 mJ, 10 V, TO

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Price:: US $0.29~0.29 / piece [Get Latest Price]

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PartNumber:: IRFR9120TRL

Brand:: International Rectifier - IR | Pack: TO | D/C: 00+

Availability:: Supply Ability: 100/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-07-10

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Part Number:IRFR9120TRL
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Product Summary

The IRFR9120TRL is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFR9120TRL is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRFR9120TRL is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Parametrics

IRFR9120TRL absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: -6.6 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: -4.2 A; (3)IDM Pulsed Drain Current: 26 A; (4)PD @TC = 25℃ Power Dissipation: 40 W; (5)Linear Derating Factor: 0.32 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 100 mJ; (8)IAR Avalanche Current: -6.6 A; (9)EAR Repetitive Avalanche Energy: 4.0 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 150 ℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) ℃.

Features

IRFR9120TRL features: (1)Ultra Low On-Resistance; (2)P-Channel; (3)Surface Mount; (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated.