(China (Mainland))
Product Summary
The TPCF8104 is a silicon P channel MOS type field effect transistor.
Parametrics
TPCF8104 absolute maximum ratings: (1)Drain-source voltage, VDSS: -30 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: -30 V; (3)Gate-source voltage, VGSS: ±20 V; (4)Drain current, DC (Note 1), ID: -6 A; Pulse (Note 1), IDP: -24 A; (5)Drain power dissipation (t = 5 s)(Note 2a), PD: 2.5 W; (6)Drain power dissipation (t = 5 s)(Note 2b), PD: 0.7 W; (7)Single pulse avalanche energy (Note 3), EAS: 5.8 mJ; (8)Avalanche current, IAR: -3 A; (9)Repetitive avalanche energy (Note 4), EAR: 0.25 mJ; (10)Channel temperature, Tch: 150 °C; (11)Storage temperature range, Tstg: −55 to 150 °C.
Features
TPCF8104 features: (1)Low drain-source ON resistance: RDS (ON)= 21 mΩ (typ.); (2)High forward transfer admittance: |Yfs| = 9.6 S (typ.); (3)Low leakage current: IDSS = -10 μA (max)(VDS = -30 V); (4)Enhancement mode: Vth = -0.8 to −2.0 V (VDS = -10 V, ID = -1mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 TPCF8104(TE85L,F) |
Toshiba |
MOSFET PW TR P-Ch -30V -6A |
Data Sheet |
Negotiable |
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TPCF8104(TE85L,F,M |
Toshiba |
MOSFET MOSFET P-Ch 30V 6A |
Data Sheet |
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TPCF8104(TE85L) |
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MOSFET P-CH 30V 6A VS-8 |
Data Sheet |
Negotiable |
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TPCF8104 |
Other |
|
Data Sheet |
Negotiable |
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