TPCF8104

TPCF8104, silicon P channel MOS type field effect transistor, 30 V, 6 A, 2.5 W, SOT

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Price:: US $0.13~0.13 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 6000 :	0.13 / Piece

PartNumber:: TPCF8104

Brand:: Toshiba Semiconductor - Toshiba | D/C: 07+

Availability:: Supply Ability: 6000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-08-02

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Part Number:TPCF8104
US $0.13 - 0.13
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piece

Product Summary

The TPCF8104 is a silicon P channel MOS type field effect transistor.

Parametrics

TPCF8104 absolute maximum ratings: (1)Drain-source voltage, VDSS: -30 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: -30 V; (3)Gate-source voltage, VGSS: ±20 V; (4)Drain current, DC (Note 1), ID: -6 A; Pulse (Note 1), IDP: -24 A; (5)Drain power dissipation (t = 5 s)(Note 2a), PD: 2.5 W; (6)Drain power dissipation (t = 5 s)(Note 2b), PD: 0.7 W; (7)Single pulse avalanche energy (Note 3), EAS: 5.8 mJ; (8)Avalanche current, IAR: -3 A; (9)Repetitive avalanche energy (Note 4), EAR: 0.25 mJ; (10)Channel temperature, Tch: 150 °C; (11)Storage temperature range, Tstg: −55 to 150 °C.

Features

TPCF8104 features: (1)Low drain-source ON resistance: RDS (ON)= 21 mΩ (typ.); (2)High forward transfer admittance: |Yfs| = 9.6 S (typ.); (3)Low leakage current: IDSS = -10 μA (max)(VDS = -30 V); (4)Enhancement mode: Vth = -0.8 to −2.0 V (VDS = -10 V, ID = -1mA).