Product Summary

The FQPF5N60 is an N-Channel enhancement mode power field effect transistor, which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of the FQPF5N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF5N60 is well suited for high efficiency switch mode power supply.

Parametrics

FQPF5N60 absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current - Continuous (TC = 25℃): 2.8 A, Continuous (TC = 100℃): 1.77 A; (3)Drain Current - Pulsed: 11.2 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 300 mJ; (6)Avalanche Current: 2.8 A; (7)Repetitive Avalanche Energy: 4.0 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 40 W, Derate above 25℃: 0.32 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.

Features

FQPF5N60 features: (1)2.8A, 600V, RDS(on) = 2.0Ω@VGS = 10 V; (2)Low gate charge ( typical 16 nC); (3)Low Crss ( typical 9.0 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)TO-220F package isolation = 4.0kV.

Diagrams

FQPF5N60 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQPF5N60
FQPF5N60
Fairchild Semiconductor
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Data Sheet
Negotiable 
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Data Sheet
0-1: $0.58
1-25: $0.44
25-100: $0.41
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FQPF5N60CYDTU
Fairchild Semiconductor
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Data Sheet
Negotiable