(China (Mainland))
Product Summary
The IRF9530N is a Power MOSFET. The IRF9530N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF9530N absolute maximum ratings: (1)Pulsed Drain Current: -56; (2)Power Dissipation: 3.8W; (3)Power Dissipation: 79W; (4)Linear Derating Factor: 0.53 W/℃; (5)Gate-to-Source Voltage: ± 20V; (6)Single Pulse Avalanche Energy: 250mJ; (7)Avalanche Current: -8.4 A; (8)Repetitive Avalanche Energy: 7.9mJ; (9)Peak Diode Recovery dv/dt: -5.0 V/ns; (10)Operating Junction and Storage Temperature Range:-55℃ to 175℃.
Features
IRF9530N features: (1) Advanced Process Technology; (2) Surface Mount; (3)175℃ Operating Temperature; (4) Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRF9530N |
International Rectifier |
MOSFET P-CH 100V 14A TO-220AB |
Data Sheet |
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IRF9530NL |
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MOSFET P-CH 100V 14A TO-262 |
Data Sheet |
Negotiable |
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IRF9530NPBF |
International Rectifier |
MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC |
Data Sheet |
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IRF9530NSPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF9530NS |
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MOSFET P-CH 100V 14A D2PAK |
Data Sheet |
Negotiable |
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IRF9530NLPBF |
International Rectifier |
MOSFET P-CH 100V 14A TO262-3 |
Data Sheet |
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IRF9530NSTRLPBF |
International Rectifier |
MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC |
Data Sheet |
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IRF9530NSTRRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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