IRF1010E

IRF1010E, 60V, 84A, HEXFET Power MOSFET, 59 A, International

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Price:: US $0.50~0.50 / piece [Get Latest Price]

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PartNumber:: IRF1010E

Brand:: International Rectifier - IR | D/C: 11+

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Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-05-29

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Part Number:IRF1010E
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Product Summary

The IRF1010EPBF is an Advanced HEXFET Power MOSFET from International Rectifier. The IRF1010EPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF1010EPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF1010EPBF absolute maximum rarings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 84 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 59 A; (3)IDM Pulsed Drain Current: 330 A; (4)PD @TC = 25℃ Power Dissipation: 200 W; (5)Linear Derating Factor: 1.4 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)IAR Avalanche Current: 50 A; (8)EAR Repetitive Avalanche Energy: 17 mJ; (9)dv/dt Peak Diode Recovery dv/dt: 4.0 V/ns; (10)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (12)Mounting torque, 6-32 or M3 screw: 10 lbf·in(1.1 N·m).

Features

IRF1010EPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.