Product Summary
The STP60NF06 is a power MOSFET realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. The STP60NF06 is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer application. The STP60NF06 is also intended for any application with low gate charge drive requirements. Applications are (1)High-efficiency DC-DC converters; (2)UPS and motor control; (3)Automotive.
Parametrics
STP60NF06 absolute maximum ratings: (1)VDS, drain-source voltage (VGS = 0): 60 V; (2)VDGR, drain-gate voltage (RGS = 20 kW): 60 V; (3)VGS, gate- source voltage: ± 20 V; (4)ID, drain current (continuos)at TC = 25°C: 60 A; (5)ID, drain current (continuos)at TC = 100°C: 42 A; (6)IDM (l), drain current (pulsed): 240 A; (7)PTOT, total dissipation at TC = 25°C: 110 W; (8)Derating factor: 0.73 W/°C; (9)dv/dt (1), peak diode recovery voltage slope: 4 V/ns; (10)Tstg, storage temperature: –65 to 175 °C; (11)Tj, max. operating junction temperature: -65 to 175 °C.
Features
STP60NF06 features: (1)Typical RDS(on)= 0.014W; (2)Exceptional dv/dt capability; (3)100% avalanche tested; (4)Application oriented characterization.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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STP60NF06 |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
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STP60NF06FP |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
Negotiable |
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STP60NF06L |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
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STP60NF06LFP |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
Negotiable |
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