(China (Mainland))
Product Summary
The 1N5402 is a silicon rectifier.
Parametrics
1N5402 absolute maximum ratings: (1)Maximum recurrent peak reverse voltage, VRRM: 200 Volts; (2)Maximum RMS voltage, VRMS: 140 Volts; (3)Maximum DC blocking voltage, VDC: 200 Volts; (4)Maximum average forward rectified current .375 (9.5mm)lead length at TL = 105℃, IO: 3.0 Amps; (5)Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method), IFSM: 200 Amps; (6)Maximum instantaneous forward voltage at 3.0A DC, VF: 1.1 Volts; (7)Maximum DC reverse current at rated DC blocking voltage, @TA = 25℃, IR: 5.0 uAmps; @TA = 100℃, IR: 500 uAmps; (8)Maximum full load reverse current average, full cycle .375 (9.5mm)lead length at TL = 75℃, IR: 30 uAmps; (9)Typical junction capacitance ( note ), CJ: 40 pF; (10)Typical thermal resistance: 30 ℃/W; (11)Operating and storage temperature range, TJ,TSTG: -65 to +175 ℃.
Features
1N5402 features: (1)Low cost; (2)Low leakage; (3)Low forward voltage drop; (4)High current capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 1N5402 |
Fairchild Semiconductor |
Rectifiers 3.0a Rectifier General Purpose |
Data Sheet |
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1N5402/1 |
Vishay Semiconductors |
Rectifiers Vr/200V Io/3A BULK |
Data Sheet |
Negotiable |
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1N5402-E3/54 |
Vishay Semiconductors |
Rectifiers 3.0 Amp 200 Volt |
Data Sheet |
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1N5402-E3/73 |
Vishay Semiconductors |
Rectifiers 3.0 Amp 200 Volt |
Data Sheet |
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1N5402-G |
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RECTIFIER GP 200V 3.0A DO27 |
Data Sheet |
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1N5402G-T |
Diodes Inc. |
Rectifiers 3.0A 100V |
Data Sheet |
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1N5402RL |
ON Semiconductor |
Rectifiers 200V 3A Standard |
Data Sheet |
Negotiable |
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1N5402-T |
Diodes Inc. |
Rectifiers 3.0A 100V |
Data Sheet |
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