Product Summary
The IRF840 is a power MOSFET. The IRF840 from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package of the IRF840 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF840 absolute maximum ratings: (1)Drain-source voltage: 500 V; (2)Gate-source voltage: ± 20 V; (3)Continuous drain current VGS at 10 V: 8.0 A at TC = 25 ℃, 5.1 A at TC = 100 ℃; (4)Pulsed drain current: 32 A; (5)Linear derating factor: 1.0 W/℃; (6)Single pulse avalanche energy: 510 mJ; (7)Repetitive avalanche current: 8.0 A; (8)Repetitive avalanche energy: 13 mJ; (9)Maximum power dissipation at TC = 25 ℃: 125 W; (10)Peak diode recovery dV/dt: 3.5 V/ns; (11)Operating junction and storage temperature range: -55 to + 150 ℃; (12)Soldering recommendations (peak temperature) for 10 s: 300 ℃; (13)Mounting Torque at 6-32 or M3 screw:10 lbf · in; 1.1 N · m.
Features
IRF840 features: (1)Dynamic dV/dt rating; (2)Repetitive avalanche rated; (3)Fast switching; (4)Ease of paralleling; (5)Simple drive requirements; (6)Lead (Pb)-free available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF840 |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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IRF840, SiHF840 |
Other |
Data Sheet |
Negotiable |
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IRF840_R4943 |
Fairchild Semiconductor |
MOSFET N-CH POWER |
Data Sheet |
Negotiable |
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IRF840A |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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IRF840A, SiHF840A |
Other |
Data Sheet |
Negotiable |
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IRF840A_R4944 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
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IRF840AL |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
Negotiable |
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IRF840ALPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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