Product Summary
The PMK30EP is an Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The PMK30EP is designed and qualified for use in computing, communications, consumer and industrial applications only. Applications are (1)Battery management; (2)Load switching.
Parametrics
PMK30EP absolute maximum ratings: (1)VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C: 30 V; (2)ID drain current Tsp = 25 °C; VGS = -10 V: -14. 9 A; (3)Ptot total power dissipation Tsp = 25 °C: 6.9 W; (4)Static characteristics RDSon drain-source on-state resistance VGS = -10 V; ID = -9.2 A; Tj = 25 °C: 16 to 19 mΩ; (5)Dynamic characteristics QGD gate-drain charge VGS = -10 V; ID = -9.2 A; VDS = -15 V; Tj = 25 °C; see Figure 11: 7 - nC.
Features
PMK30EP feature: Low conduction losses due to low on-state resistance.
Diagrams
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![]() PMK30EP,518 |
![]() NXP Semiconductors |
![]() MOSFET MOSFET P-CH FET 30V 14.9A |
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Image | Part No | Mfg | Description | ![]() |
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![]() PMK30EP,518 |
![]() NXP Semiconductors |
![]() MOSFET MOSFET P-CH FET 30V 14.9A |
![]() Data Sheet |
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![]() PMK35EP,518 |
![]() NXP Semiconductors |
![]() MOSFET MOSFET P-CH FET 30V 14.9A |
![]() Data Sheet |
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![]() PMK3B000 |
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![]() LIBRA/LEGEND MOUNTING PANEL |
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![]() PMK3C000 |
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![]() 1/16 DIN MOUNTING PANEL |
![]() Data Sheet |
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