FQPF8N60

transistor, Fairchild, 600 V, 7.5 A, 10 V, FQPF8N60

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Price:: US $0.30~0.30 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10000 :	0.30 / Piece

PartNumber:: FQPF8N60

Brand:: Fairchild Semiconductor - Fairchild | D/C: 11+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-29

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Part Number:FQPF8N60
US $0.30 - 0.30
Quantity:

piece

Product Summary

The FQPF8N60 is an N-Channel enhancement mode power field effect transistor, which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of the FQPF8N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF8N60 is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF8N60 absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current - Continuous (TC = 25℃): 7.5 A, Continuous (TC = 100℃): 4.6 A; (3)Drain Current - Pulsed: 30 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 230 mJ; (6)Avalanche Current: 7.5 A; (7)Repetitive Avalanche Energy: 14.7 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 48 W, Derate above 25℃: 0.38 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.

Features

FQPF8N60 features: (1)7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V; (2)Low gate charge ( typical 28 nC); (3)Low Crss ( typical 12 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.