Product Summary

The FQPF8N60 is an N-Channel enhancement mode power field effect transistor, which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of the FQPF8N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF8N60 is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF8N60 absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current - Continuous (TC = 25℃): 7.5 A, Continuous (TC = 100℃): 4.6 A; (3)Drain Current - Pulsed: 30 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 230 mJ; (6)Avalanche Current: 7.5 A; (7)Repetitive Avalanche Energy: 14.7 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 48 W, Derate above 25℃: 0.38 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.

Features

FQPF8N60 features: (1)7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V; (2)Low gate charge ( typical 28 nC); (3)Low Crss ( typical 12 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQPF8N60 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQPF8N60C
FQPF8N60C

Fairchild Semiconductor

MOSFET 600V N-Ch Q-FET advance C-Series

Data Sheet

0-1: $0.92
1-25: $0.71
25-100: $0.56
100-250: $0.44
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FQPF8N60CF

Other


Data Sheet

Negotiable 
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Fairchild Semiconductor

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Data Sheet

0-1: $0.94
1-25: $0.73
25-100: $0.67
100-250: $0.58
FQPF8N60CT
FQPF8N60CT

Fairchild Semiconductor

MOSFET 600V N-Ch Q-FET advance C-Series

Data Sheet

0-1: $0.98
1-25: $0.88
25-100: $0.77
100-250: $0.70
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Fairchild Semiconductor

MOSFET N-CH/600V/8A/ QFET C-Series

Data Sheet

Negotiable