TPC6003(TE85L,F,M)

tpc6003(te85l,f,m), toshiba field effect transistor, 30 v, 24 a, 19 mΩ, SOT

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Price:: US $0.08~0.08 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 48000 :	0.08 / Piece

PartNumber:: TPC6003(TE85L,F,M)

Brand:: Toshiba Semiconductor - Toshiba | D/C: 10+

Availability:: Supply Ability: 48000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-25

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Part Number:TPC6003(TE85L,F,M)
US $0.08 - 0.08
Quantity:

piece

Product Summary

The tpc6003(te85l,f,m) is a silicon n channel mos type (u-mosiii) toshiba field effect transistor.

Parametrics

tpc6003(te85l,f,m) absolute maximum ratings: (1)drain-source voltage vdss: 30 v; (2)drain-gate voltage (rgs - 20 k)vdgr: 30 v; (3)gate-source voltage vgss: 20 v; (4)drain current pulse (note 1)idp: 24 a; (5)drain power dissipation (t - 5 s)(note 2a)pd: 2.2 w; (6)drain power dissipation (t -5 s)(note 2b)pd 0.7 w; (7)single pulse avalanche energy (note 3)eas: 5.8 mj; (8)avalanche current iar: 3 a; (9)repetitive avalanche energy (note 4)ear: 0.22 mj; (10)channel temperature tch: 150 °c; (11)storage temperature range tstg: -55 to 150 °c.

Features

tpc6003(te85l,f,m) features: (1)Low drain-source ON resistance: RDS (ON)= 19 mΩ (typ.); (2)High forward transfer admittance: |Yfs| = 7 S (typ.); (3)Low leakage current: IDSS = 10 μA (max)(VDS = 30 V); (4)Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA).