(China (Mainland))
Product Summary
The IRF830 is a power MOSFET. Applications are (1)Switch mode power supply ( SMPS ); (2)Uninterruptable power supply; (3)High speed power switching.
Parametrics
IRF830 absolute maximum ratings: (1)ID @ TC = 25℃ continuous drain current, VGS @ 10V: 5.0 A; (2)ID @ TC = 100℃ continuous drain current, VGS @ 10V: 3.2 A; (3)IDM pulsed drain current: 20 A; (4)PD @TC = 25℃ power dissipation: 74 W; (5)Linear derating factor: 0.59 W/℃; (6)VGS gate-to-source voltage: ± 30 V; (7)dv/dt peak diode recovery dv/dt: 5.3 V/ns; (8)TJ operating junction: -55 to + 150℃; (9)TSTG storage temperature range: -55 to + 150℃; (10)Soldering temperature, for 10 seconds(1.6mm from case): 300℃; (11)Mounting torqe, 6-32 or M3 screw: 10 lbf.in (1.1N.m).
Features
IRF830 features: (1)Low gate charge qg results in simple drive requirement; (2)Improved gate, avalanche and dynamic dv/dt ruggedness; (3)Fully characterized capacitance and avalanche voltage and current; (4)Effective coss specified.
Diagrams
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Pricing (USD) |
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 IRF830, SiHF830 |
Other |
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Data Sheet |
Negotiable |
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IRF830_R4943 |
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International Rectifier |
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IRF8302MTRPBF |
International Rectifier |
MOSFET 30V N-Channel HEXFET Power MOSFET |
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IRF8304MTR1PBF |
International Rectifier |
MOSFET 30V N-Channel HEXFET Power MOSFET |
Data Sheet |
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IRF8306MTR1PBF |
International Rectifier |
MOSFET MOSFT 30V Gen 3.6mOhm mx 25nC Og |
Data Sheet |
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IRF8306MTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF8308MTR1PBF |
International Rectifier |
MOSFET 30V N-Channel HEXFET Power MOSFET |
Data Sheet |
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