IRF530N

IRF530N, MOSFET, 17 A, 70 W, 20 V, TO

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Price:: US $0.40~0.40 / piece [Get Latest Price]

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1 ~ 10000 :	0.40 / Piece

PartNumber:: IRF530N

Brand:: International Rectifier - IR | D/C: 11+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-05-29

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Part Number:IRF530N
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IRF530N

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Product Summary

The IRF530N is a HEXFET power MOSFET. The IRF530N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF530N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF530N absolute maximum ratings: (1)ID @ TC = 25℃ continuous drain current, VGS @ 10V: 17 A; (2)ID @ TC = 100℃ continuous drain current, VGS @ 10V: 12 A; (3)IDM pulsed drain current: 60 A; (4)PD @TC = 25℃ power dissipation: 70 W; (5)Linear derating factor: 0.47 W/℃; (6)VGS gate-to-source voltage: ± 20 V; (7)IAR avalanche current: 9.0 A; (8)Ear repetitive avalanche energy: 7.0 mJ; (9)dv/dt peak diode recovery dv/dt: 7.4 V/ns; (10)TJ TSTG operating junction and storage temperature range: -55 to + 175 ℃; (11)Soldering temperature, for 10 seconds 300 (1.6mm from case )℃.

Features

IRF530N features: (1)Advanced process technology; (2)Ultra low on-resistance; (3)Dynamic dv/dt rating; (4)175℃ operating temperature; (5)Fast switching; (6)Fully avalanche rated; (7)Lead-free.