Product Summary
The 2SC3356 is a kind of NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold.
Parametrics
2SC3356 absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 20 V; (2)Collector-to-Emitter Voltage, VCEO: 12 V; (3)Emitter-to-Base Voltage, VEBO: 3.0 V; (4)Collector Current, IC: 100 mA; (5)Total Dissipation, Ptot: 200 mW; (8)Junction Temperature, Tj: 150℃; (9)Storage Temperature, Tstg: -65 to +150℃.
Features
2SC3356 features: (1)Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz; (2)High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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2SC3356 |
Other |
Data Sheet |
Negotiable |
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2SC3356 R24 |
Other |
Data Sheet |
Negotiable |
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2SC3356 R25 |
Other |
Data Sheet |
Negotiable |
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2SC3356F |
Other |
Data Sheet |
Negotiable |
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2SC3356-R24/R25 |
Other |
Data Sheet |
Negotiable |
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2SC3356R25/R24 |
Other |
Data Sheet |
Negotiable |
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2SC3356-T1B R24 |
Other |
Data Sheet |
Negotiable |
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2SC3356-T1B R25 |
Other |
Data Sheet |
Negotiable |
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