Product Summary

The 2SC3356 is a kind of NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold.

Parametrics

2SC3356 absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 20 V; (2)Collector-to-Emitter Voltage, VCEO: 12 V; (3)Emitter-to-Base Voltage, VEBO: 3.0 V; (4)Collector Current, IC: 100 mA; (5)Total Dissipation, Ptot: 200 mW; (8)Junction Temperature, Tj: 150℃; (9)Storage Temperature, Tstg: -65 to +150℃.

Features

2SC3356 features: (1)Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz; (2)High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz.

Diagrams

2SC3356 circuit diagram

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2SC3356
2SC3356

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Data Sheet

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2SC3356 R24
2SC3356 R24

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2SC3356 R25
2SC3356 R25

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2SC3356F
2SC3356F

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2SC3356-R24/R25
2SC3356-R24/R25

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2SC3356R25/R24
2SC3356R25/R24

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2SC3356-T1B R24
2SC3356-T1B R24

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2SC3356-T1B R25
2SC3356-T1B R25

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