Product Summary
The IRF640N is a power MOSFET from international rectifier. The IRF640N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF640N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF640N absolute maximum ratings: (1)ID @ TC = 25℃, continuous drain current, VGS @ 10V: 18 A; (2)ID @ TC = 100℃, continuous drain current, VGS @ 10V: 13 A; (3)IDM pulsed drain current:72 A; (4)PD @TC = 25℃ power dissipation: 150 W; (5)Linear derating factor: 1.0 W/℃; (6)VGS gate-to-source voltage: ± 20 V; (7)EAS single pulse avalanche energy: 247 mJ; (8)IAR avalanche current: 18 A; (9)EAR repetitive avalanche energy: 15 mJ; (10)dv/dt peak diode recovery dv/dt: 8.1 V/ns; (11)TJ, TSTG, operating junction and storage temperature range: -55 to +175℃; (12)Soldering temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).
Features
IRF640N features: (1)Advanced process technology; (2)Dynamic dv/dt rating; (3)175℃ operating temperature; (4)Fast switching; (5)Fully avalanche rated; (6)Ease of paralleling; (7)Simple drive requirements.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF640N |
MOSFET N-CH 200V 18A TO-220AB |
Data Sheet |
Negotiable |
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IRF640N_R4942 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
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IRF640NLPBF |
International Rectifier |
MOSFET MOSFT 200V 18A 150mOhm 44.7nC |
Data Sheet |
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IRF640NPBF |
International Rectifier |
MOSFET MOSFT 200V 18A 150mOhm 44.7nC |
Data Sheet |
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IRF640NL |
MOSFET N-CH 200V 18A TO-262 |
Data Sheet |
Negotiable |
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IRF640NS |
International Rectifier |
MOSFET N-CH 200V 18A D2PAK |
Data Sheet |
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IRF640NSTRLPBF |
International Rectifier |
MOSFET MOSFT 200V 18A 150mOhm 44.7nC |
Data Sheet |
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IRF640NSTRRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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