IRF640N

IRF640N, MOSFET, 18 A, 150 W, 20 V, TO

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Price:: US $0.40~0.40 / piece [Get Latest Price]

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1 ~ 10000 :	0.40 / Piece

PartNumber:: IRF640N

Brand:: International Rectifier - IR | D/C: 11+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-05-29

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Part Number:IRF640N
US $0.40 - 0.40
Quantity:

piece

Product Summary

The IRF640N is a power MOSFET from international rectifier. The IRF640N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF640N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF640N absolute maximum ratings: (1)ID @ TC = 25℃, continuous drain current, VGS @ 10V: 18 A; (2)ID @ TC = 100℃, continuous drain current, VGS @ 10V: 13 A; (3)IDM pulsed drain current:72 A; (4)PD @TC = 25℃ power dissipation: 150 W; (5)Linear derating factor: 1.0 W/℃; (6)VGS gate-to-source voltage: ± 20 V; (7)EAS single pulse avalanche energy: 247 mJ; (8)IAR avalanche current: 18 A; (9)EAR repetitive avalanche energy: 15 mJ; (10)dv/dt peak diode recovery dv/dt: 8.1 V/ns; (11)TJ, TSTG, operating junction and storage temperature range: -55 to +175℃; (12)Soldering temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRF640N features: (1)Advanced process technology; (2)Dynamic dv/dt rating; (3)175℃ operating temperature; (4)Fast switching; (5)Fully avalanche rated; (6)Ease of paralleling; (7)Simple drive requirements.