SI4800BDY-T1-E3

SI4800BDY-T1-E3, MOSFET, 30 V, 40 A, 0.8 W, SOP

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Price:: US $0.11~0.11 / piece [Get Latest Price]

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PartNumber:: SI4800BDY-T1-E3

Brand:: Vishay General Semiconductor - Vishay | D/C: 03+

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Products Upload time: 2013-07-30

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Product Summary

The SI4800BDY-T1-E3 is an N-channel reduced Qg, fast switching MOSFET.

Parametrics

SI4800BDY-T1-E3 absolute maximum ratings: (1)Drain-source voltage, VDS: 30 V; (2)Gate-source voltage, VGS: ± 25 V; (3)Continuous drain current (TJ = 150 °C), TA = 25 °C, ID: 9, 6.5 A; TA = 70 °C, ID: 7.0, 5.0 A; (4)Pulsed drain current (10 μs pulse width), IDM: 40 A; (5)Continuous source current (diode conduction),IS: 2.3 A; (6)Avalanche current, L = 0.1 mH, IAS: 15 A; (7)Single-pulse avalanche energy, L = 0.1 mH, EAS: 11.25 mJ; (8)Maximum power dissipation, TA = 25 °C, PD: 2.5, 1.3 W; TA = 70 °C, PD: 1.6, 0.8 W; (9)Operating junction and storage temperature range, TJ, Tstg: - 55 to 150 °C.

Features

SI4800BDY-T1-E3 features: (1)Halogen-free according to IEC 61249-2-21 available; (2)TrenchFET power MOSFET; (3)High-efficient PWM optimized; (4)100 % UIS and Rg tested.