(China (Mainland))
Product Summary
The 2SA1267-GR is a kind of PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
Parametrics
2SA1267-GR absolute maximum ratings: (1)Collector Base Voltage, -VCBO: 50 V; (2)Collector Emitter Voltage, -VCEO: 50 V; (3)Emitter Base Voltage, -VEBO: 5 V; (4)Collector Current, -IC: 150 mA; (5)Emitter Current IE, 150: mA; (6)Power Dissipation, Ptot: 400 mW; (7)Junction Temperature, Tj: 125℃; (8)Storage Temperature Range, TS: -55 to +125℃.
Features
2SA1267-GR features: (1)The transistor is subdivided into three groups, O, Y and G according to its DC current gain; (2)On special request, these transistors can be manufactured in different pin configurations.
Diagrams
