Product Summary

The si1417edh-t1-e3 is a P-Channel 12-V (D-S) MOSFET.

Parametrics

si1417edh-t1-e3 absolute maximum ratings: (1)Drain-Source Voltage VDS: -12V; (2)Gate-Source Voltage VGS: 12V; (3)Continuous Drain Current (TJ = 150C), TA = 25℃: -3.3 -2.7; TA = 85℃: -2.4 -1.9 A; (4)Pulsed Drain Current IDM: -8A; (5)Continuous Diode Current (Diode Conduction), IS: -1.4 to -0.9A; (6)Maximum Power Dissipation, TA = 85℃, PD: 0.81 to 0.52W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150 ℃.

Features

si1417edh-t1-e3 features: (1)TrenchFET Power MOSFETS: 1.8-V Rated; (2)ESD Protected: 3000 V; (3)Thermally Enhanced SC-70 Package.

Diagrams

si1417edh-t1-e3 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI1417EDH-T1-E3
SI1417EDH-T1-E3
Vishay/Siliconix
MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
Data Sheet
0-1: $0.40
1-10: $0.29
10-100: $0.27
100-250: $0.23
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
Si1400DL
Si1400DL
Other

Data Sheet
Negotiable 
SI1400DL-T1
SI1400DL-T1
Vishay/Siliconix
MOSFET 20V 1.7A
Data Sheet
Negotiable 
SI1400DL-T1-E3
SI1400DL-T1-E3
Vishay/Siliconix
MOSFET 20V 1.7A
Data Sheet
0-1: $0.34
1-10: $0.23
10-100: $0.20
100-250: $0.17
SI1400DL-T1-GE3
SI1400DL-T1-GE3

MOSFET N-CH D-S 20V SC-70-6
Data Sheet
0-1: $0.44
1-25: $0.31
25-100: $0.27
100-250: $0.23
250-500: $0.20
500-1000: $0.15
SI1401EDH-T1-GE3
SI1401EDH-T1-GE3
Vishay/Siliconix
MOSFET 12V 4A 2.8W
Data Sheet
0-1: $0.29
1-10: $0.20
10-100: $0.17
100-250: $0.14
SI1402DH-T1-E3
SI1402DH-T1-E3
Vishay/Siliconix
MOSFET 30V 3.4A 0.95W
Data Sheet
Negotiable