(China (Mainland))
Product Summary
The irf6607 is a kind of HEXFET Power MOSFET, which combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package of the irf6607 allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Parametrics
irf6607 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±12V; (3)Continuous Drain Current, VGS @ 10V, ID @ TA = 25℃: 27A; (4)Continuous Drain Current, VGS @ 10V, ID @ TA = 70℃ : 22A; (5) Pulsed Drain Current. IDM: 220A; (6)TJ TSTG, Operating Junction and Storage Temperature Range: -40 to + 150 ℃.
Features
irf6607 features: (1)Application Specific MOSFETs; (2)Ideal for CPU Core DC-DC Converters; (3)Low Conduction Losses; (4)High Cdv/dt Immunity; (5)Low Profile (<0.7 mm); (6)Dual Sided Cooling Compatible; (7)Compatible with existing Surface Mount Techniques.
Diagrams
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 IRF6607 |
International Rectifier |
MOSFET |
Data Sheet |
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IRF6607TR1 |
International Rectifier |
MOSFET |
Data Sheet |
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