(China (Mainland))
Product Summary
The fzt869ta is a sot223 npn silicon planar high current (high performance) transistor.
Parametrics
fzt869ta absolute maximum ratings: (1)Collector-Base Voltage VCBO: 60 V; (2)Collector-Emitter Voltage VCEO: 25 V; (3)Emitter-Base Voltage VEBO: 6 V; (4)Peak Pulse Current ICM: 20 A; (5)Continuous Collector Current IC: 7 A; (6)Power Dissipation at Tamb =25°C Ptot: 3 W; (7)Operating and Storage Temperature Range Tj Tstg: -55 to +150 °C.
Features
fzt869ta features: (1)Extremely low equivalent on-resistance; R CE(sat)36mΩ at 5A; (2)7 Amp continuous collector current (20 Amp peak); (3)Very low saturation voltages; (4)Excellent gain charateristics specified upto 20 Amp.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FZT869TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN High Ct Low Sat |
Data Sheet |
|
|
||||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||
 |
FZT849 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||
|
FZT849TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN High Ct Low Sat |
Data Sheet |
|
|
||||||||||||||
|
FZT849TC |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) NPN High Ct Low Sat |
Data Sheet |
|
|
||||||||||||||
|
FZT851 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||
|
FZT851TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN High Current |
Data Sheet |
|
|
||||||||||||||
|
FZT851TC |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) NPN High Current |
Data Sheet |
|
|
||||||||||||||
