Product Summary

The 7N60B is a kind of 600V N-Channel MOSFET, which is produced using Fairchild proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The 7N60B is well suited for high efficiency switch mode power supplies.

Parametrics

7N60B absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 600V; (2)IDM, Drain Current - Pulsed: 28A; (3)VGSS, Gate-Source Voltage: 30V; (4)EAS, Single Pulsed Avalanche Energy: 420 mJ; (5)IAR, Avalanche Current: 7.0 A; (6)EAR, Repetitive Avalanche Energy: 14.7 mJ; (7)dv/dt, Peak Diode Recovery dv/dt: 5.5 V/ns; (8)PD, Power Dissipation (TC = 25℃): 147W; (9)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃.

Features

7N60B features: (1)7.0A, 600V, RDS(on) = 1.2@VGS = 10 V; (2)Low gate charge ( typical 38 nC); (3)Low Crss ( typical 23 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)TO-220F package isolation = 4.0kV.

Diagrams

7N60B circuit diagram