Product Summary

The FDS8958A is a dual N- and P-Channel enhancement mode power field effect transistor. It uses the advanced PowerTrench process of Fairchild Semiconductor that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. The FDS8958A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parametrics

FDS8958A absolute maximim ratings: (1)VDSS Drain-Source Voltage: Q1=30V, Q2=30V; (2)VGSS Gate-Source Voltage: Q1=±20V, Q2=±20V; (3)ID Drain Current - Continuous: Q1=7A, Q2=-5A; - Pulsed: Q1=20A, Q2=-20A; (4)PD Power Dissipation for Dual Operation: 2 W; Power Dissipation for Single Operation: 1.6W/1W/0.9W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150 ℃.

Features

FDS8958A features: (1)Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω@ VGS = 10V; RDS(on) = 0.040Ω@ VGS = 4.5V; (2)Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω@ VGS = -10V; RDS(on) = 0.080Ω@ VGS = -4.5V; (3)Fast switching speed; (4)High power and handling capability in a widely used surface mount package.

Diagrams

FDS8958A block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDS8958A
FDS8958A
Fairchild Semiconductor
MOSFET SO8 COMP N-P-CH T/R
Data Sheet
0-1: $0.48
1-25: $0.42
25-100: $0.32
100-250: $0.28
FDS8958A_F085
FDS8958A_F085
Fairchild Semiconductor
MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET
Data Sheet
0-1: $0.77
1-25: $0.67
25-100: $0.62
100-250: $0.54
FDS8958A_NF073
FDS8958A_NF073
Fairchild Semiconductor
MOSFET DUAL NCH AND PCH POWER TRENCH MOSFET
Data Sheet
Negotiable 
FDS8958A_Q
FDS8958A_Q
Fairchild Semiconductor
MOSFET SO8 COMP N-P-CH T/R
Data Sheet
Negotiable