FDG312P

FDG312P, MOSFET, 20 V, 1.2 A, 0.75 W, SOT

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Price:: US $0.10~0.10 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 6000 :	0.10 / Piece

PartNumber:: FDG312P

Brand:: Fairchild Semiconductor - Fairchild | D/C: 11+

Availability:: Supply Ability: 6000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-07-30

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Part Number:FDG312P
US $0.10 - 0.10
Quantity:

piece

Product Summary

The FDG312P is a P-channel 2.5V specified PowerTrench MOSFET. The FDG312P is produced using Fairchild Semiconductor advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The FDG312P is be well suit for portable electronics applications. Applications are (1)Load switch; (2)Battery protection; (3)Power management.

Parametrics

FDG312P absolute maximum ratings: (1)Drain-source voltage: -20 V; (2)Gate-source voltage: ± 8 V; (3)Drain current, continuous: -1.2 A; Pulsed: -6 A; (4)Power dissipation for single operation (Note 1a): 0.75 W; (Note 1b): 0.55 W; (Note 1c): 0.48; (5)Operating and storage junction temperature range: -55 to +150 °C.

Features

FDG312P features: (1)-1.2 A, -20 V. RDS(on)= 0.18 W @ VGS = -4.5 V; RDS(on)= 0.25 W @ VGS = -2.5 V; (2)Low gate charge (3.3 nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)Compact industry standard SC70-6 surface mount package.