Product Summary

The CEU63A3 is an N-channel enhancement mode field effect transistor.

Parametrics

CEU63A3 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Drain current-continuous: 55 A; (4)Drain current-pulsed: 150 A; (5)Maximum power dissipation @ TC = 25 ℃: 57 W; Derate above 25 ℃: 0.45 W/ ℃; (6)Operating and store temperature range: -55 to 150 ℃; (7)Thermal resistance, junction-to-case: 2.2 ℃/W; (8)Thermal resistance, junction-to-ambient: 50 ℃/W.

Features

CEU63A3 features: (1)30V, 55A, RDS(ON)= 11mW @VGS = 10V. RDS(ON)= 14mW @VGS = 4.5V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handing capability; (4)TO-251 & TO-252 package; (5)Lead free product is acquired.

Diagrams

CEU63A3 pin connection

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