(China (Mainland))
Product Summary
The TPC8111 is an Effect Transistor. Applications are (1)Lithium Ion Battery Applications; (2)Notebook PC Applications; (3)Portable Equipment Applications.
Parametrics
TPC8111 absolute maximum ratings: (1)Drain-source voltage VDSS: 30 V; (2)Drain-gate voltage (RGS = 20 kΩ)VDGR: 30 V; (3)Gate-source voltage VGSS: ±20 V; (4)DC (Note 1)ID: 11A; (5)Drain current Pulse (Note 1)IDP: 44 A; (6)Drain power dissipation (t = 10 s)PD: 1.9 W; (7)Drain power dissipation (t = 10 s)(Note 2b)PD: 1.0 W; (8)Single pulse avalanche energy (Note 3)EAS: 31.5 mJ; (9)Avalanche current IAR: 11 A; (10)Repetitive avalanche energy (Note 2a)(Note 4)EAR: 0.19 mJ; (11)Channel temperature Tch: 150 °C; (12)Storage temperature range Tstg: -55 to 150 °C.
Features
TPC8111 features: (1)Small footprint due to small and thin package; (2)Low drain-source ON resistance: RDS (ON)= 8.1 mΩ (typ.); (3)High forward transfer admittance: |Yfs| = 23 S (typ.); (4)Low leakage current: IDSS = −10 μA (max)(VDS = −30 V); (5)Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 TPC8111(TE12L,Q,M) |
Toshiba |
MOSFET MOSFET P-Ch 30V 11A Rdson=0.012Ohm |
Data Sheet |
Negotiable |
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TPC8111 |
Other |
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Data Sheet |
Negotiable |
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