(China (Mainland))
Product Summary
The IRF7420 is a P-channel HEXFET power MOSFET. The IRF7420 from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The IRF7420 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvements, multiple device can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique.
Parametrics
IRF7420 absolute maximum ratings: (1)VDS, drain- source voltage: -20 V; (2)ID @ TA = 25°C, continuous drain current, VGS @ -4.5V: -11.5 A; (3)ID @ TA= 70°C, continuous drain current, VGS @ -4.5V: -9.2 A; (4)IDM, pulsed drain current: -46 A; (5)PD @TA = 25°C, power dissipation: 2.5 W; (6)PD @TA = 70°C, power dissipation: 1.6 W; (7)Linear derating factor: 20 mW/°C; (8)VGS, gate-to-source voltage: ±8 V; (9)TJ, TSTG, junction and storage temperature range: -55 to +150 °C.
Features
IRF7420 features: (1)Ultra low On-resistance; (2)P-channel MOSFET; (3)Surface mount; (4)Available in tape or reel.
Diagrams
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 IRF7420 |
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MOSFET P-CH 12V 11.5A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7420PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7420TRPBF |
International Rectifier |
MOSFET MOSFT PCh -12V -11.5A 14mOhm 38nC |
Data Sheet |
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IRF7420TR |
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MOSFET P-CH 12V 11.5A 8-SOIC |
Data Sheet |
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