Product Summary

The IRF7809AV is a chipset for DC-DC converter. The IRF7809AV employs advanced HEXFET power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The package of the IRF7809AV is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.

Parametrics

IRF7809AV absolute maximum ratings: (1)Drain-Source voltage VDS: 30V; (2)Gate-Source voltage VGS: ±12V; (3)Continuous drain or source TA = 25℃ ID: 14.5A; (4)Current (VGS 3 4.5V) TL = 90℃: 14.2A; (5)Pulsed drain current. IDM: 100A; (6)Power dissipation TA = 25℃ PD: 2.5W; (7)TL = 90℃: 2.4W; (8)Junction, storage temperature range TJ, TSTG: –55 to 150℃; (9)Continuous source current (Body Diode) IS: 2.5A; (10)Pulsed source current. ISM: 50A.

Features

IRF7809AV features: (1)N-Channel application-specific MOSFETs; (2)Ideal for CPU core DC-DC converters; (3)Low conduction losses; (4)Low switching losses; (5)Minimizes parallel MOSFETs for high current applications.

Diagrams

IRF7809AV pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7809AV
IRF7809AV

MOSFET N-CH 30V 13.3A 8-SOIC
Data Sheet
Negotiable 
IRF7809AVPBF
IRF7809AVPBF
International Rectifier
MOSFET
Data Sheet
0-3160: $0.32
IRF7809AVTRPBF
IRF7809AVTRPBF
International Rectifier
MOSFET MOSFT 30V 13.3A 9mOhm 41nC
Data Sheet
0-1: $1.11
1-25: $0.68
25-100: $0.47
100-250: $0.44
IRF7809AVTR
IRF7809AVTR
International Rectifier
MOSFET N-CH 30V 13.3A 8-SOIC
Data Sheet
1-4000: $0.70