Product Summary
The IRF7828TRPBF is a HEXFET power MOSFET for DC-DC converter. This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converter that power the latest generation of microprocessors. The IRF7828TRPBF has been optimized for all parameters that are critical in synchronous buck converter including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7828TRPBF offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.
Parametrics
IRF7828TRPBF absolute maximum ratings: (1)Drain-Source voltage, VDS: 30 V; (2)Gate-Source voltage, VGS: ±20 V; (3)Continuous drain or source current (VGS ≥ 4.5V), TA = 25°C, ID: 13.6 A; TL = 70°C, ID: 11 A; (4)Pulsed drain current, IDM: 100 A; (5)Power dissipation, TA = 25°C, PD: 2.5 W; TL = 70°C, PD: 1.6 W; (6)Junction & Storage temperature range, TJ, TSTG: –55 to 150 °C; (7)Continuous source current (body diode), IS: 3.1 A; (8)Pulsed source current, ISM: 100 A; (9)Maximum junction-to-ambient, RθJA: 50 °C/W; (10)Maximum junction-to-lead, RθJL: 20 °C/W.
Features
IRF7828TRPBF features: (1)N-Channel application-specific MOSFETs; (2)Ideal for CPU core DC-DC converters; (3)Low conduction losses; (4)Low switching losses.
Diagrams
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