Product Summary
The SI4431DY is a P-Channel Logic Level PowerTrench MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The SI4431DY is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. The SI4431DY-TI is used in DC/DC converter, Load switch, Motor Drive.
Parametrics
SI4431DY absolute maxing ratings: (1)Drain-Source Voltage VDSS: -30 V; (2)Gate-Source Voltage VGSS: ±20 V; (3)Continuous Drain Current ID: -6.3 A; (4)Power Dissipation for Single Operation PD: 2.5 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.
Features
SI4431DY features: (1)-6.3 A, -30 V. RDS(ON) = 0.032 Ω@ VGS = -10 V, RDS(ON) = 0.05 Ω@ VGS = -4.5 V; (2)Low gate charge; (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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SI4431DY |
Fairchild Semiconductor |
MOSFET SO8 PCH 30V |
Data Sheet |
Negotiable |
|
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SI4431DY-E3 |
Vishay/Siliconix |
MOSFET 30V 7A 2.5W |
Data Sheet |
Negotiable |
|
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SI4431DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30 Volt 7.0 Amp 2.5W |
Data Sheet |
Negotiable |
|