Product Summary

The SI4431DY is a P-Channel Logic Level PowerTrench MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The SI4431DY is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. The SI4431DY-TI is used in DC/DC converter, Load switch, Motor Drive.

Parametrics

SI4431DY absolute maxing ratings: (1)Drain-Source Voltage VDSS: -30 V; (2)Gate-Source Voltage VGSS: ±20 V; (3)Continuous Drain Current ID: -6.3 A; (4)Power Dissipation for Single Operation PD: 2.5 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.

Features

SI4431DY features: (1)-6.3 A, -30 V. RDS(ON) = 0.032 Ω@ VGS = -10 V, RDS(ON) = 0.05 Ω@ VGS = -4.5 V; (2)Low gate charge; (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

SI4431DY block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI4431DY
SI4431DY

Fairchild Semiconductor

MOSFET SO8 PCH 30V

Data Sheet

Negotiable 
SI4431DY-E3
SI4431DY-E3

Vishay/Siliconix

MOSFET 30V 7A 2.5W

Data Sheet

Negotiable 
SI4431DY-T1-E3
SI4431DY-T1-E3

Vishay/Siliconix

MOSFET 30 Volt 7.0 Amp 2.5W

Data Sheet

Negotiable