Product Summary
The NTMD4N03R2 is a Power MOSFET. Applications are (1)Dc-Dc Converters; (2)Computers; (3)Printers; (4)Cellular and Cordless Phones; (5)Disk Drives and Tape Drives.
Parametrics
NTMD4N03R2 absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: 30 Volts; (2)Gate-to-Source Voltage - Continuous VGS: 20 Volts; (3)Drain Current: 12 Adc; (4)Total Power Dissipation @ TA = 25°C (Note 1)PD: 2.0 Watts; (5)Operating and Storage Temperature Range TJ, Tstg: -55 to +150 °C; (6)Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 4.45 Apk, L = 8 mH, RG = 25 W)EAS: 80 mJ; (7)Maximum Lead Temperature for Soldering Purposes for 10 seconds TL: 260 °C.
Features
NTMD4N03R2 features: (1)Designed for use in low voltage, high speed switching applications; (2)Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life; (3)Miniature SO-8 Surface Mount Package-Saves Board Space; (4)Diode is Characterized for Use in Bridge Circuits; (5)Diode Exhibits High Speed, with Soft Recovery.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() NTMD4N03R2 |
![]() ON Semiconductor |
![]() MOSFET 30V 4A N-Channel |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() NTMD4N03R2G |
![]() ON Semiconductor |
![]() MOSFET 30V 4A N-Channel |
![]() Data Sheet |
![]()
|
|