Product Summary
The UMH11NTN is an NPN complex digital transistor. Application is inverter circuit, interface circuit, driver circuit.
Parametrics
UMH11NTN absolute maximum ratings: (1)Supply voltage: 50 V; (2)Input voltage: -10 to +40 V; (3)Output current: 50 mA; (4)Collector current: 100 mA; (5)Power dissipation: 150 mW; (6)Junction temperature: 150 °C; (7)Range of storage temperature: -55 to +150 °C.
Features
UMH11NTN features: (1)Built-In Biasing Resistors, R1 = R2 = 10kW; (2)Two DTC114E chips in one package; (3)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit); (4)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects; (5)Only the on/off conditions need to be set for operation, making the circuit design easy; (6)Lead Free/RoHS Compliant.
Diagrams
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![]() Transistors Switching (Resistor Biased) DUAL NPN 50V 50MA SOT-363 |
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![]() UMH11N-TP |
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![]() Transistors Switching (Resistor Biased) 10KOhms 250MHz |
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