BU806

BU806, silicon Epitaxial Planar NPN power transistor, 400V, 8 A, 60 W, DIP

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Price:: US $0.30~0.30 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10000 :	0.30 / Piece

PartNumber:: BU806

Brand:: STMicroelectronics - ST | Pack: DIP | D/C: 09+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-24

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Part Number:BU806
US $0.30 - 0.30
Quantity:

piece

Product Summary

The BU806 is a silicon Epitaxial Planar NPN power transistor in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. The BU806 can be used in horizontal output stages of 110℃ RT video displays. The applications are horizontal deflection for monochrome TVs.

Parametrics

BU806 absolute maximum ratings: (1)VCBO, Collector-base Voltage (IE = 0): 400V; (2)VCEV, Collector-emitter Voltage (VBE = -6V): 400V; (3)VCEO, Collector-emitter Voltage (IB = 0): 200V; (4)VEBO, Emitter-Base Voltage (IC = 0): 6 V; (5)IC, Collector Current: 8 A; (6)ICM, Collector Peak Current: 15 A; (7)IDM, Damper Diode Peak Forward Current: 10 A; (8)IB, Base Current: 2 A; (9)Ptot, Total Power Dissipation at Tcase < 25℃: 60 W; (10)Tstg, Storage Temperature: -65 to 150℃; (11)Tj, Max Operating Junction Temperature: 150℃.

Features

BU806 features: (1)STMicroelectronics preferred salestypes; (2)NPN darlingtons; (3)low base-drive requirements; (4)integrated antiparallel collector-emitter diode.