Product Summary

The BU806 is a silicon Epitaxial Planar NPN power transistor in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. The BU806 can be used in horizontal output stages of 110℃ RT video displays. The applications are horizontal deflection for monochrome TVs.

Parametrics

BU806 absolute maximum ratings: (1)VCBO, Collector-base Voltage (IE = 0): 400V; (2)VCEV, Collector-emitter Voltage (VBE = -6V): 400V; (3)VCEO, Collector-emitter Voltage (IB = 0): 200V; (4)VEBO, Emitter-Base Voltage (IC = 0): 6 V; (5)IC, Collector Current: 8 A; (6)ICM, Collector Peak Current: 15 A; (7)IDM, Damper Diode Peak Forward Current: 10 A; (8)IB, Base Current: 2 A; (9)Ptot, Total Power Dissipation at Tcase < 25℃: 60 W; (10)Tstg, Storage Temperature: -65 to 150℃; (11)Tj, Max Operating Junction Temperature: 150℃.

Features

BU806 features: (1)STMicroelectronics preferred salestypes; (2)NPN darlingtons; (3)low base-drive requirements; (4)integrated antiparallel collector-emitter diode.

Diagrams

BU806 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
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BU806
BU806

Fairchild Semiconductor

Transistors Darlington NPN Epitaxial Sil Darl

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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BU806
BU806

Fairchild Semiconductor

Transistors Darlington NPN Epitaxial Sil Darl

Data Sheet

Negotiable 
BU807
BU807

Fairchild Semiconductor

Transistors Darlington NPN Epitaxial Sil Darl

Data Sheet

Negotiable 
BU807FI
BU807FI

Other


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Negotiable 
BU807TU
BU807TU

Fairchild Semiconductor

Transistors Darlington NPN Epitaxial Sil Darl

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Negotiable 
BU808
BU808

Other


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Negotiable 
BU808-3PN
BU808-3PN

Other


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Negotiable