(China (Mainland))
Product Summary
The tpc8104-h(te12l) is a Silicon P Channel MOS Type (High Speed U-MOSII) Effect Transistor. Applications are (1)Lithium Ion Battery Applications; (2)Notebook PC Applications; (3)Portable Equipment Applications.
Parametrics
tpc8104-h(te12l) absolute maximum ratings: (1)Drain-source voltage VDSS: -30 V; (2)Drain-gate voltage (RGS = 20 kΩ)VDGR: -30 V; (3)Gate-source voltage VGSS: ±20 V; (4)Drain current DC (Note 1)ID: -5 A; (5)Drain current Pulse (Note 1)IDP: -20 A; (6)Drain power operation dissipation (t = 10 s)(Note 2a): 2.4 W; (7)Drain power dissipation (t = 10 s)(Note 2b)Single-device operation (Note 3a)PD (1): 1.0 W; (8)Single pulse avalanche energy (Note 4)EAS: 32.5 mJ; (9)Avalanche current IAR: -5 A; (10)Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)EAR: 0.24 mJ; (11)Channel temperature Tch: 150 °C; (12)Storage temperature range Tstg: -55 to 150 °C.
Features
tpc8104-h(te12l) features: (1)Small footprint due to small and thin package; (2)High speed switching; (3)Small gate charge : Qg = 17 nC (typ.); (4)Low drain-source ON resistance : RDS (ON)= 38 mΩ (typ.); (5)High forward transfer admittance : |Yfs| = 7.0 S (typ.); (6)Low leakage current : IDSS = -10 μA (max)(VDS = -30 V); (7)Enhancement-mode : Vth = -0.8~-2.0 V (VDS = -10 V, ID = -1 mA).
Diagrams
