Product Summary
The TC7S86FU is a high speed C2MOS exclusive or gate faricated with silicon gate C2MOS technology. The TC7S86FU achieves the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power disspation.Input and output buffers of the TC7S86FU are provided which offer high noise immunitu and stable output.
Parametrics
TC7S86FU absolute maximum ratings: (1) Supply voltage range Vcc: -0.5 to 7V; (2) DC Input voltage VIN: -0.5 to Vcc +0.5V; (3) DC output voltage VOUT: -0.5 to Vcc +0.5V; (4) Input diode current IIK: ±20mA; (5) Output diode current IOK: ±20mA; (6) DC VCC/Ground Current ICC: ±25mA; (7) Power dissipation PD: 200mw; (8) Storage temperature: -65 to +150°C; (9) Lead temperature TL: 260°C.
Features
TC7S86FU features: (1) high speed: tpd=10ns (Typ.) at Vcc=5V; (2) Low power disspation: Icc=1μA (Max.) at Ta=25°C; (3) High noise immunity: VNIH=VNIL=28% Vcc (min.) ; (4) Output drive capability: 5LSTTL loads; (5) Symmetrical output impedance丨OH丨=IOL=2mA (Min.) ; (6) Balanced propagation delays:tpLH=tpHL; (7) wide operating voltage range: Vcc (opr) =2 to 6V.
Diagrams

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![]() TC7S86FUT5LFT |
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![]() IC GATE EXCLUSIVE OR C2MOS SSOP5 |
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![]() TC7S00F(T5L,F,T) |
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![]() IC GATE NAND 2INP 74HC00 5-SSOP |
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![]() TC7S00F(TE85L) |
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![]() IC GATE NAND 2INP 74HC00 5-SSOP |
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![]() Negotiable |
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![]() TC7S00F(TE85L,F) |
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![]() Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
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![]() TC7S00FT5LFT |
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![]() Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
![]() Data Sheet |
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![]() TC7S00FUT5LFT |
![]() Toshiba |
![]() Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
![]() Data Sheet |
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![]() TC7S02F(T5L,F,T) |
![]() Toshiba (VA) |
![]() IC GATE NOR 2INPUT 74HC02 5-SSOP |
![]() Data Sheet |
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(China (Mainland))










