(China (Mainland))
Product Summary
The mmdf2c02er2(nds995 is a power MOSFET which utilize Motorolas High Cell Density HDTMOS process. The mmdf2c02er2(nds995 features ultra low RDS(on) and true logic level performance. The mmdf2c02er2(nds995 is capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
Parametrics
mmdf2c02er2(nds995 absolute maximum ratings: (1)Drain–to–Source Voltage VDSS: 20 Vdc; (2)Gate–to–Source Voltage VGS: 20 Vdc; (3)Drain–to–Gate Voltage (RGS = 1.0 mW)VDGR: 20 Vdc; (4)Drain Current — Continuous N–Channel: 20 A; (5)Operating and Storage Temperature Range TJ, Tstg: – 55 to 150 °C; (6)Total Power Dissipation @ TA= 25°C (2)PD: 2.0 Watts; (7)Maximum Lead Temperature for Soldering, 0.0625, from case. Time in Solder Bath is 10 seconds. TL: 260 °C.
Features
mmdf2c02er2(nds995 features: (1)Ultra Low RDS(on)Provides Higher Efficiency and Extends Battery Life; (2)Logic Level Gate Drive — Can Be Driven by Logic ICs; (3)Miniature SO–8 Surface Mount Package — Saves Board Space; (4)Diode Is Characterized for Use In Bridge Circuits; (5)Diode Exhibits High Speed, With Soft Recovery; (6)Avalanche Energy Specified; (7)Mounting Information for SO–8 Package Provided.
Diagrams
