Product Summary

The ir2106strpbf is a high voltage, high speed power MOSFET and IGBT driver with independent highand low side referenced output chan-nel. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction.The logic input is compatible withstandard CMOS or LSTTL output, down to 3.3V logic. The ir2106strpbf features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration whichoperates up to 600 volts.

Parametrics

ir2106strpbf absolute maximum ratings: (1)High side floating absolute voltage: 625V; (2)High side floating supply offset voltage: VB + 0.3V; (3)High side floating output voltage: VB + 0.3V; (4)Low side and logic fixed supply voltage: 25V; (5)Low side output voltage: VCC + 0.3V; (6)Logic input voltage: VCC + 0.3V; (7)Allowable offset supply voltage transient: 50V/ns; (8)Junction temperature: 150℃; (9)Storage temperature: 150℃; (10)Lead temperature (soldering, 10 seconds): 300℃.

Features

ir2106strpbf features: (1)Floating channel designed for bootstrap operation: Fully operational to +600V; Tolerant to negative transient voltagedV/dt immune; (2)Gate drive supply range from 10 to 20V (IR2106(4)); (3)Undervoltage lockout for both channels; (4)3.3V, 5V and 15V input logic compatible; (5)Matched propagation delay for both channels; (6)Logic and power ground +/- 5V offset; (7)Lower di/dt gate driver for better noise immunity; (8)Outputs in phase with inputs (IR2106).

Diagrams

ir2106strpbf pin connection

Image Part No Mfg Description Data Sheet Download Pricing
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0-1: $1.59
1-25: $0.94
25-100: $0.74
100-250: $0.74
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