(China (Mainland))
Product Summary
The HM62W16255HCTT-12 is a 4-Mbit high speed static RAM organized 256-kword 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. The HM62W16255HCTT-12 is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W16255HCTT-12 is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.
Parametrics
HM62W16255HCTT-12 absolute maximum ratings: (1)Supply voltage relative to VSS: –0.5 to +4.6 V; (2)Voltage on any pin relative to VSS: –0.5 to VCC + 0.5 V; (3)Power dissipation: 1.0 W; (4)Operating temperature: 0 to +70 °C; (5)Storage temperature: –55 to +125 °C; (6)Storage temperature under bias: –10 to +85 °C.
Features
HM62W16255HCTT-12 features: (1)Single 3.3 V supply: 3.3 V ± 0.3 V; (2)Access time: 10 ns (max); (3)Completely static memory—No clock or timing strobe required; (4)Equal access and cycle times; (5)Directly TTL compatible—All inputs and outputs; (6)Operating current: 145 mA (max); (7)TTL standby current: 40 mA (max); (8)CMOS standby current: 5 mA (max); (9)CMOS standby current: 1 mA (max)(L-version); (10)Data retention current: 0.6 mA (max)(L-version); (11)Data retention voltage: 2.0 V (min)(L-version); (12)Center VCC and VSS type pinout.
Diagrams
