(China (Mainland))
Product Summary
The hat1021r-el is a Silicon P Channel Power MOS FET.
Parametrics
hat1021r-el absolute maximum ratings: (1)Drain to source voltage VDSS: 20 V; (2)Gate to source voltage VGSS: 10 V; (3)Drain current ID: 5.5 A; (4)Drain peak current ID(pulse): 44 A; (5)Body–drain diode reverse drain current IDR: 5.5 A; (6)Channel dissipation Pch: 2.5 W; (7)Channel temperature Tch: 150 °C; (8)Storage temperature Tstg: –55 to +150 °C.
Features
hat1021r-el features: (1)Low on-resistance; (2)Capable of 2.5 V gate drive; (3)Low drive current; (4)High density mounting.
Diagrams
