NDS8434

NDS8434, P-Channel enhancement mode power field effect transistor, 8 V, 20A, 2.5 W, SOP

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.20~0.20 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10000 :	0.20 / Piece

PartNumber:: NDS8434

Brand:: Fairchild Semiconductor - Fairchild | Pack: SOP | D/C: 09+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. Sukey's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-05-25

From Other Seller

Part Number:NDS8434
US $0.20 - 0.20
Quantity:

piece

Product Summary

The NDS8434 P-Channel enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The NDS8434 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parametrics

NDS8434 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -20 V; (2)VGSS Gate-Source Voltage: -8 V; (3)ID Drain Current - Continuous: -6.5 A, Pulsed: -20A; (4)PD Maximum Power Dissipation: 2.5 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150 °C.

Features

NDS8434 features: (1)-6.5A, -20V. RDS(ON)= 0.035W @ VGS = -4.5V RDS(ON)= 0.05W @ VGS = -2.7V; (2)High density cell design for extremely low RDS(ON); (3)High power and current handling capability in a widely used surface mount package.