Product Summary
The fds6694 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The fds6694 has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications are (1)DC/DC converter; (2)Power management; (3)Load switch.
Parametrics
fds6694 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ±16 V; (3)ID Drain Current – Continuous: 12 A; (4)Power Dissipation for Single Operation: 2.5W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: –55 to +175 °C.
Features
fds6694 features: (1)12 A, 30 V. RDS(ON)= 11 mW @ VGS = 10 V RDS(ON)= 13.5 mW @ VGS = 4.5 V; (2)Low gate charge (13 nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.
Diagrams
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![]() FDS6694 |
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![]() FDS6694_Q |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 |
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