Product Summary

The P5506HVG is a Dual N-Channel Enhancement Mode Field Effect Transistor.

Parametrics

P5506HVG absolute maximum ratings: (1)Drain-Source Voltage: 60 V ; (2)Gate-Source Voltage: ±20 V; (3)Pulsed Drain Current: 20 A; (4)Junction & Storage Temperature Range: -55 to 150℃.

Diagrams

P5506HVG circuit