NTR4101PT1G

NTR4101PT1G, trench power mosfet, 20 V, 3.2A, 0.42 W, SOT

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Price:: US $0.08~0.08 / piece [Get Latest Price]

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1 ~ 10000 :	0.08 / Piece

PartNumber:: NTR4101PT1G

Brand:: ON Semiconductor - ON | Pack: SOT | D/C: 11+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-05-27

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Part Number:NTR4101PT1G
US $0.08 - 0.08
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piece

Product Summary

The NTR4101PT1G is a trench power mosfet. Applications are (1)Load/Power Management for Portables; (2)Load/Power Management for Computing; (3)Charging Circuits and Battery Protection.

Parametrics

NTR4101PT1G absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: -20 V; (2)Gate-to-Source Voltage VGS: ±8.0 V; (3)Continuous Drain Current: TA = 25°C ID -2.4 A, TA = 85°C -1.7A, t≤10 s TA = 25°C -3.2A; (4)Power Dissipation TA = 25°C PD: 0.73 W, t ≤10 s: 1.25W; (5)Continuous Drain Current: TA = 25°C ID -1.8 A, TA = 85°C -1.3A; (6)Power Dissipation: TA = 25°C PD 0.42 W; (7)Pulsed Drain Current tp = 10 μs IDM: -7.5 A; (8)ESD Capability (Note 3)C = 100 pF, RS = 1500Ω ESD: 225 V; (9)Operating Junction and Storage Temperature TJ, TSTG: -55 to 150 °C; (10)Source Current (Body Diode)IS: -2.4 A; (11)Lead Temperature for Soldering Purposes (1/8” from case for 10 s)TL: 260 °C.

Features

NTR4101PT1G features: (1)Leading −20 V Trench for Low RDS(on); (2)−1.8 V Rated for Low Voltage Gate Drive; (3)SOT−23 Surface Mount for Small Footprint; (4)Pb−Free Package is Available.