Product Summary

The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS output down to 3.3V. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high or low side configuration which operates up to 150 volts.

Parametrics

IR20153S absolute maximum ratings: (1)VB High side driver output stage voltage: -5.0 to 170v; (2)VS High side floating supply offset voltage : - 8.0 to 150v; (3)VHO Output voltage gate high connection VS: - 0.3 VB + 0.3v; (4)VCC Low side fixed supply voltage: -0.3 to 25v; (5)VIN Input voltage (IN and RESET): -0.3 VCC +0.3v; (6)dV/dt Allowable offset voltage slew rate: — 50 V/nsec; (7)TJ Junction temperature: -55 to 150v; (8)TS Storage temperature: -55 to 150v; (9)TL Lead temperature (soldering, 10 seconds): 300°C.

Features

IR20153S features: (1)Floating channel designed for bootstrap operation; (2)Fully operational up to 150V; (3)Tolerant to negative transient voltage, dV/dt immune; (4)Gate drive supply range from 5V to 20V; (5)Undervoltage lockout; (6)Internal recharge FET for bootstrap refresh; (7)Internal deadtime of 11μs and 0.8μs; (8)CMOS Schmitt-triggered input logic; (9)Output out of phase with input; (10)Reset input; (11)Split pull-up and pull-down gate drive pins; (12)Also available LEAD-FREE (PbF).

Diagrams

IR20153S pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IR20153S
IR20153S
Other

Data Sheet
Negotiable 
IR20153SPBF
IR20153SPBF

IC DRIVER HI SIDE RECHARGE 8-SOI
Data Sheet
Negotiable 
IR20153STRPBF
IR20153STRPBF

IC DRIVER HI SIDE RECHARGE 8SOIC
Data Sheet
Negotiable