(China (Mainland))
Product Summary
The 2N6671 is a silicon NPN power transistor.
Parametrics
2N6671 absolute maximum ratings: (1)VCBO Collector-base voltage: 450V; (2)VCEO Collector-emitter voltage: 300V; (3)VEBO Emitter-base voltage Open collector: 8 V; (4)IC Collector current: 8 A; (5)ICM Collector current-peak: 10 A; (6)IB Base current: 4 A; (7)PD Total Power Dissipation TC=25°C: 150 W; (8)Tj Junction temperature: 200°C; (9)Tstg Storage temperature: -65~200°C.
Features
2N6671 features: (1)With TO-3 package; (2)Low saturation voltage; (3)Fast switching speed; (4)High voltage ratings.
Diagrams
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 2N6671 |
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Negotiable |
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Data Sheet |
Negotiable |
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2N6672 |
Other |
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Data Sheet |
Negotiable |
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2N6673 |
Other |
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Data Sheet |
Negotiable |
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