(China (Mainland))
Product Summary
The tpcf8304 is a silicon p-channel mos type (u-mos iv) field effect transistor.
Parametrics
tpcf8304 absolute maximum ratings: (1)Drain-source voltage VDSS: -30 V; (2)Drain-gate voltage (RGS = 20 kΩ)VDGR: -30 V; (3)Gate-source voltage VGSS: ±20 V; (4)Drain current Pulse (Note 1)IDP: -12.8 A; (5)Drain power dissipation (t = 5 s)(Note 2a)Single-device operation PD (1): 1.35 W; (6)Single-device value at dual operation (Note 3b)PD (2): 1.12 W; (7)Single-device operation Drain power (Note 3a)PD (1): 0.53 W; (8)Single-device value at dual operation (Note 3b)PD (2): 0.33 W; (9)Single-pulse avalanche energy (Note 4)EAS: 0.67 mJ; (10)Avalanche current IAR: -1.6 A; (11)Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)EAR: 0.11 mJ; (12)Channel temperature Tch: 150 °C; (13)Storage temperature range Tstg: -55~150 °C.
Features
tpcf8304 features: (1)Low drain-source ON resistance: RDS (ON)= 60 mΩ (typ.); (2)High forward transfer admittance: |Yfs| = 5.9 S (typ.); (3)Low leakage current: IDSS = 10 μA (max)(VDS = 30 V); (4)Enhancement model: Vth = 0.8 to 2.0 V, (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 TPCF8304(TE85L,F) |
Toshiba |
MOSFET P-Ch Dual -30V -3.2A |
Data Sheet |
Negotiable |
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TPCF8304(TE85L,F,M |
Toshiba |
MOSFET P-ch -30V -3.2A VS-8 |
Data Sheet |
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