Product Summary
The tpc6108 is an Effect Transistor. The applications of the tpc6108 include Notebook PC and Portable Equipment.
Parametrics
tpc6108 absolute maximum ratings: (1)Drain-source voltage: -30 V; (2)Drain-gate voltage: -30 V; (3)Gate-source voltage: ±20 V; (4)Drain current: -4.5 A; (5)Drain power dissipation: 2.2 W; (6)Single pulse avalanche energy: 1.3 mJ; (7)Avalanche current IAR .2.25 A; (8)Repetitive avalanche energy Single-device value at dual operation: 0.22 mJ; (9)Channel temperature: 150 ℃; (10)Storage temperature range: -55 to 150 ℃.
Features
tpc6108 features: (1)Small footprint due to small and thin package; (2)Low drain-source ON resistance: RDS (ON) = 50 mΩ(typ.); (3)High forward transfer admittance: |Yfs| = 7.4 S (typ.); (4)Low leakage current: IDSS = -10 μA (max) (VDS = .30 V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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TPC6108(TE85L,F,M) |
Toshiba |
MOSFET MOSFET P-Ch 30V 4.5A Rdson=0.06Ohm |
Data Sheet |
Negotiable |
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TPC6108 |
Other |
Data Sheet |
Negotiable |
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