Product Summary
The stp4nk50z is a Power MOSFET. The stp4nk50z is obtained through an extreme optimization of ST’s well established stripbased PowerMES layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmes products. The applications of the stp4nk50z include high current, high speed switching, ideal for off-line power supplies and adaptors and pfc, lighting.
Parametrics
stp4nk50z absolute maximum ratings: (1)Drain-source Voltage: 500 V; (2)Drain-gate Voltage: 500 V; (3)Gate- source Voltage: ± 30 V; (4)Drain Current (continuous) at TC = 25℃: 3 A; (5)Drain Current (continuous) at TC = 100℃: 1.9 A; (6)Total Dissipation at TC = 25℃: 45 W; (7)Derating Factor: 0.36 W/℃; (8)Gate source ESD(HBM-C=100pF, R=1.5KW): 2800 V; (9)Operating Junction Temperature: -55 to 150 ℃; (10)Storage Temperature: -55 to 150 ℃.
Features
stp4nk50z features: (1)Typical RDS(on) = 2.3 W; (2)Extremely high dv/dt capability; (3)100% avalanche tested; (4)Gate charge minimized; (5)Very low intrinsic capacitances; (6)Very good manufacturing repeatability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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STP4NK50Z |
STMicroelectronics |
MOSFET N-Ch 500 Volt 3 Amp Zener SuperMESH |
Data Sheet |
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STP4NK50ZD |
STMicroelectronics |
MOSFET Power MOSFET |
Data Sheet |
Negotiable |
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STP4NK50ZFP |
STMicroelectronics |
MOSFET N-Ch, 500V-2.4ohms Zener SuperMESH 3A |
Data Sheet |
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