(China (Mainland))
Product Summary
The ssm6n15fu is a toshiba field effect transistor silicon n channel mos type.
Parametrics
ssm6n15fu absolute maximum ratings: (1)Drain-Source voltage VDS: 30 V; (2)Gate-Source voltage VGSS: 20 V; (3)Drain current Pulse IDP: 200 mA; (4)Drain power dissipation (Ta 25°C)PD (Note): 200 mW; (5)Channel temperature Tch: 150 °C; (6)Storage temperature range Tstg: 55~150 °C .
Features
ssm6n15fu features: (1)Small package; (2)Low ON resistance : Ron = 4.0 Ω (max)(@VGS = 4 V); Ron = 7.0 Ω (max)(@VGS = 2.5 V).
Diagrams
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 SSM6N15FU |
Other |
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Data Sheet |
Negotiable |
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SSM60T03H |
Other |
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Data Sheet |
Negotiable |
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SSM6E01TU |
Other |
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Data Sheet |
Negotiable |
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SSM6J06FU |
Other |
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Data Sheet |
Negotiable |
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SSM6J06FU(TE85L,F) |
Toshiba |
MOSFET Vds=-20V Id=-1.1A 6Pin |
Data Sheet |
Negotiable |
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SSM6J07FU |
Other |
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Data Sheet |
Negotiable |
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SSM6J07FUTE85LF |
Toshiba |
MOSFET Vds=-30V Id=-800mA 6Pin |
Data Sheet |
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