(China (Mainland))
Product Summary
The si4466dy-t1 is an N-Channel 2.5-V (G-S) MOSFET.
Parametrics
si4466dy-t1 absolute maximum ratings: (1)Drain-Source Voltage: 20 V; (2)Gate-Source Voltage: ± 12 V; (3)Continuous Drain Current: 9.5 A; (4)Pulsed Drain Current: 50 A; (5)Maximum Power Dissipation: 1.5 W; (6)Operating Junction and Storage Temperature Range: - 55 to 150 ℃.
Features
si4466dy-t1 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFETs; (3)Compliant to RoHS Directive 2002/95/EC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4466DY-T1 |
Vishay/Siliconix |
MOSFET 20V 13.2A 2.5W |
Data Sheet |
Negotiable |
|
||||||||||||
|
SI4466DY-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 13.2A 2.5W |
Data Sheet |
|
|
||||||||||||
|
SI4466DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 13.5A 3.0W 9.0mohm @ 4.5V |
Data Sheet |
|
|
||||||||||||
