(China (Mainland))
Product Summary
The si4168dy-t1-ge3 is an N-Channel 30-V (D-S) MOSFET. It is ideal for: Notebook DC/DC
Parametrics
si4168dy-t1-ge3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ± 20 V; (3)Continuous Drain Current (TJ = 150 °C)TC = 25 °C ID: 24 A; (4)Pulsed Drain Current IDM: 70 A; (5)Avalanche Current L = 0.1 mH IAS: 35 A; (6)Avalanche Energy EAS: 61 mJ; (7)Continuous Source-Drain Diode Current TC = 25 °C IS: 4.7 A; (8)Maximum Power Dissipation TC = 25 °C PD 5.7 W; (9)Operating Junction and Storage Temperature Range TJ , Tstg: - 55 to 150 °C.
Features
si4168dy-t1-ge3 features: (1)Halogen-free; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI4168DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 24A 5.7W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si4100DY |
Other |
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Data Sheet |
Negotiable |
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Si4100DY-T1-E3 |
Vishay/Siliconix |
MOSFET 100V 6.8A 6.0W |
Data Sheet |
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SI4100DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 100V 6.8A 6.0W 63mohm @ 10V |
Data Sheet |
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Si4102DY |
Other |
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Data Sheet |
Negotiable |
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SI4102DY-T1-E3 |
Vishay/Siliconix |
MOSFET 100V 3.8A 4.8W |
Data Sheet |
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SI4102DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 100V 3.8A 4.8W 158mohm @ 10V |
Data Sheet |
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